International Journal of Environmental Science and Development

Abstract—In this study, analysis using high thermal conductive material for measuring junction temperature (Tj) in high power GaN-based light emitting diodes (LED) was presented. Thermal characteristics of high power Light-emitting-diode have been analyzed by using various different structure conduction models. The forward operation voltage is advantageously used to measure the junction temperature of light emitting diodes. Using this method, junction temperature (Tj) of LED under various structures and chip mounting methods was measured. It was found that the junction temperature can be reduced considerably by using diamond film substrates and CNT film substrates. In this study, for model F structure, the junction temperature using diamond film can be decreased by about 10.8% under 1.5W power, decreased by about 12% under 2.6W power and decreased by about 11.6% under 4.2W power for 1 mm square die. The junction temperature using CNT film can be decreased by about 12.7% under 1.5W power, decreased by about 14.1% under 2.6W power and decreased by about 14.2% under 4.2W power for 1 mm square die. The thermal resistance (RT) of diamond film can be measured to be 12.6℃/W under 4.2W power and the thermal resistance (RT) of CNT film can be measured to be 12.2℃/W under 4.2W.

Index Terms—Junction temperature, diamond film, light-emitting-diode, CNT film.

Cheng Yi Hsu and Yuli Lin are with College of Engineering, Chung Hua University, Hsinchu, Taiwan (e-mail: d09724003@chu.edu.tw, yulilin@chu.edu.tw).

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Cite: Cheng Yi Hsu and Yuli Lin, "Analysis of High-Power LED Packages with Diamond and CNT Film," International Journal of Environmental Science and Development vol. 8, no. 5, pp. 318-322, 2017.